New Method for Threshold Voltage Extraction of High Voltage MOSFETs based on Gate-to-Drain Capacitance Measurement
2006
Details
Title
New Method for Threshold Voltage Extraction of High Voltage MOSFETs based on Gate-to-Drain Capacitance Measurement
Author(s)
Anghel, C. ; Bakeroot, B. ; Chauhan, Y. S. ; Gillon, R. ; Maier, C. ; Moens, P. ; Doutreloigne, J. ; Ionescu, A. M.
Published in
IEEE Electron Device Letters
Volume
27
Issue
7
Pages
602-604
Date
2006
Other identifier(s)
DAR: 8853
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Laboratories
NANOLAB
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > NANOLAB - Nanoelectronic Devices Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2007-05-16