Polyimide sacrificial layer process for SOI SG-MOSFET pressure sensor
2005
Details
Title
Polyimide sacrificial layer process for SOI SG-MOSFET pressure sensor
Author(s)
Fernández-Bolaños, M. ; Abelé, N. ; Bouvet, D. ; Pott, V. ; Racine, G. ; Quero, J. M. ; Ionescu, A. M.
Published in
31st International Conference on Micro- and Nano-Engineering
Conference
31th International Conference on Micro- and Nano-Engineering (MNE), Vienna, Austria, September 19-22, 2005
Date
2005
Laboratories
NANOLAB
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > NANOLAB - Nanoelectronic Devices Laboratory
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date
2007-05-16