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000104467 005__ 20180317092600.0
000104467 02470 $$2ISI$$a000236225100247
000104467 037__ $$aCONF
000104467 245__ $$aSuspended-Gate MOSFET: bringing new MEMS functionality into solid-state transistor
000104467 269__ $$a2005
000104467 260__ $$c2005
000104467 336__ $$aConference Papers
000104467 700__ $$0242553$$g165147$$aAbelé, N.
000104467 700__ $$0240907$$g111335$$aFritschi, R.
000104467 700__ $$0241223$$g163875$$aBoucart, K.
000104467 700__ $$aCasset, F.
000104467 700__ $$aAncey, P.
000104467 700__ $$aIonescu, A. M.$$g122431$$0241430
000104467 773__ $$tIEEE International Electron Device Meeting
000104467 909CO $$pSTI$$ooai:infoscience.epfl.ch:104467$$pconf
000104467 909C0 $$0252177$$pNANOLAB$$xU10328
000104467 937__ $$aNANOLAB-CONF-2005-019
000104467 970__ $$a3/LEG2
000104467 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000104467 980__ $$aCONF