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000104467 005__ 20180317092600.0
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000104467 245__ $$aSuspended-Gate MOSFET: bringing new MEMS functionality into solid-state transistor
000104467 269__ $$a2005
000104467 260__ $$c2005
000104467 336__ $$aConference Papers
000104467 700__ $$0242553$$aAbelé, N.$$g165147
000104467 700__ $$0240907$$aFritschi, R.$$g111335
000104467 700__ $$0241223$$aBoucart, K.$$g163875
000104467 700__ $$aCasset, F.
000104467 700__ $$aAncey, P.
000104467 700__ $$0241430$$aIonescu, A. M.$$g122431
000104467 773__ $$tIEEE International Electron Device Meeting
000104467 909CO $$ooai:infoscience.epfl.ch:104467$$pSTI$$pconf
000104467 909C0 $$0252177$$pNANOLAB$$xU10328
000104467 937__ $$aNANOLAB-CONF-2005-019
000104467 970__ $$a3/LEG2
000104467 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000104467 980__ $$aCONF