A Closed-form Charge-based Expression for Drain Current in Symmetric and Asymmetric Double Gate MOSFET
2006
Details
Title
A Closed-form Charge-based Expression for Drain Current in Symmetric and Asymmetric Double Gate MOSFET
Author(s)
Roy, A. S. ; Sallese, J.-M. ; Enz, C.
Published in
Solid-State Electronics
Volume
50
Issue
4
Pages
687-693
Date
2006
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > EDLAB - Group of Electron Device Modeling and Technology
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > LSI2 - Integrated Systems Laboratory (STI/IC)
Scientific production and competences > STI - School of Engineering > STI Archives > LEG1 - Electronics Laboratory 1
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > LSI2 - Integrated Systems Laboratory (STI/IC)
Scientific production and competences > STI - School of Engineering > STI Archives > LEG1 - Electronics Laboratory 1
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2007-05-16