Charge, Current, and Noise Partitioning in MOSFET in the Presence of Mobility Degradation
The Ward-Dutton (WD) partitioning scheme is used extensively to develop transient and high-frequency advanced compact models in MOSFET analysis. However, it remains an open question if this scheme can be used for field-dependent mobility that is enhanced in state-of-the-art submicrometer technologies. In this paper, after demonstrating that the well-known WD partitioning is indeed invalid for field-dependent mobility, the authors develop a very general partitioning strategy that can always be defined in small-signal analysis for any arbitrary velocity-field relationship. It has also been shown that for large-signal operation, the existence of a partitioning scheme can be determined by the solution of an integral equation. © 2006 IEEE.
Keywords: MOSFET ; semiconductor device models ; Ward-Dutton partitioning ; charge partitioning ; current partitioning ; field-dependent mobility ; integral equation ; mobility degradation ; noise partitioning ; small-signal analysis ; noise
Record created on 2007-05-16, modified on 2016-08-08