An Analytical Thermal Noise Model of MOS Transistor Valid in All Modes Of Operation
2005
Details
Title
An Analytical Thermal Noise Model of MOS Transistor Valid in All Modes Of Operation
Author(s)
Roy, A. S. ; Enz, C.
Published in
NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations; ICNF 2005
Series
AIP Proceedings, 780
Pages
741-744
Conference
18th International Conference on Noise and Fluctuations (ICNF), Salamanca, Spain, 19-23 September 2005
Date
2005
ISBN
0-7354-0267-1
Other identifier(s)
View record in Web of Science
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > LSI2 - Integrated Systems Laboratory (STI/IC)
Scientific production and competences > STI - School of Engineering > STI Archives > LEG1 - Electronics Laboratory 1
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Scientific production and competences > STI - School of Engineering > STI Archives > LEG1 - Electronics Laboratory 1
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date
2007-05-16