An Analytical Thermal Noise Model of MOS Transistor Valid in All Modes Of Operation
Published in:
NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations; ICNF 2005, 860 pages
Presented at:
18th International Conference on Noise and Fluctuations (ICNF), Salamanca, Spain, 19-23 September 2005
Laboratories:
Record created 2007-05-16, last modified 2018-03-17