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An Analytical Thermal Noise Model of MOS Transistor Valid in All Modes Of Operation

Roy, A. S. ; Enz, C.

Published in:
NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations; ICNF 2005, 860 pages
Presented at:
18th International Conference on Noise and Fluctuations (ICNF), Salamanca, Spain, 19-23 September 2005
Year:
2005
Other identifiers:
View record in Web of Science
Laboratories:
LEG1
LSI2

Record appears in:
Scientific production and competences > Archives > I&C - School of Computer and Communication Sciences > LSI2 - Integrated Systems Laboratory 2 (STI/IC)
Scientific production and competences > STI - School of Engineering > IEL - Institute of Electrical Engineering > LSI2 - Integrated Systems Laboratory 2 (STI/IC)
Scientific production and competences > Archives > STI - School of Engineering > LEG1 - Electronics Laboratory 1
Scientific production and competences > I&C - School of Computer and Communication Sciences > IINFCOM
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published



 Record created 2007-05-16, last modified 2018-03-17

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