An Analytical Thermal Noise Model of MOS Transistor Valid in All Modes Of Operation

• Presented at: 18th International Conference on Noise and Fluctuations (ICNF), Salamanca, Spain, 19-23 September 2005
• Published in: NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations; ICNF 2005, p. 860 pages
• Series: Materials Physics and Applications
• Publication date: 2005

Reference

• LEG1-CONF-2005-009
• View record in Web of Science
• URL: http://proceedings.aip.org/proceedings/confproceed/780.jsp

Record created on 2007-05-16, modified on 2017-05-12