Ultrathin organic transistors on oxide surfaces

We have built a model organic field-effect transistor that is basically composed of a single layer of pentacene crystal in interaction with an oxide surface. Drain and source contacts are ohmic so that the pentacene layer can carry a current density as high as 3000 A cm<sup>-2</sup> at a gate voltage of -60 V. Four-probe and two-probe transport measurements as a function of temperature and fields are presented in relation with structural near-field observations. The experimental results suggest a simple two-dimensional model where the equilibrium between free and trapped carriers at the oxide interface determines the OFET characteristics and performance


Published in:
New Journal of Physics, 7, 1
Year:
2005
Publisher:
Deutsche Physikalische Gesellschaft & IOP Publishing Ltd
Keywords:
Note:
Copyright 2005, IEE
8609240
1367-2630
ultrathin organic transistors
ohmic contacts
organic field-effect transistor
pentacene crystal
oxide surfaces
source contacts
drain contacts
pentacene layer
current density
gate voltage
two-probe transport measurements
four-probe transport measurements
structural near-field observations
two-dimensional model
trapped carriers
free carriers
oxide interface
-60 V
Laboratories:




 Record created 2007-04-03, last modified 2018-03-17


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