Abstract

The authors have developed a procedure for the preparation of small (40×40 μm2) window-type YBa2Cu3O7-δ-Pb junctions with YSZ insulator and native tunnel barrier. They present the patterning technique of the two electrodes based on photolithography and wet etching. The nature of the barrier is found to be semiconducting. The tunneling measurements show gap-like feature of YBa2Cu3O7-δ at 8.5 meV and some additional features related to Pb and YBa2Cu3O7-δ phonon spectra

Details

Actions