Influence of the carrier gas composition on morphology, dislocation and microscopic luminescence properties of selectively grown GaN by hybrid vapor phase epitaxy
2002
Details
Title
Influence of the carrier gas composition on morphology, dislocation and microscopic luminescence properties of selectively grown GaN by hybrid vapor phase epitaxy
Author(s)
Wagner, V ; Parrilaud, O ; Bühlmann, HJ ; Ilegems, M ; Gradecak, S ; Stadelmann, PA ; Riemann, T ; Christen, J
Published in
Journal of Applied Physics
Volume
92
Issue
3
Pages
1307-1316
Date
2002
Other identifier(s)
View record in Web of Science
DAR: 821
DAR: 821
Laboratories
CIME
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > CIME - Interdisciplinary Center for Electron Microscopy
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2007-02-15