000100704 001__ 100704
000100704 005__ 20181203020741.0
000100704 02470 $$2ISI$$a000176465200008
000100704 02470 $$a829$$2DAR
000100704 037__ $$aARTICLE
000100704 245__ $$aQuantitative (200) dark-field imaging of InGaAs/GaAs layers : measurement of chemical composition and strain effects
000100704 269__ $$a2001
000100704 260__ $$c2001
000100704 336__ $$aJournal Articles
000100704 700__ $$aCagnon, J
000100704 700__ $$0240619$$g104664$$aBuffat, PA
000100704 700__ $$0240052$$g106465$$aStadelmann, PA
000100704 700__ $$aLeifer, K$$g102335$$0241420
000100704 773__ $$j169$$tInst. Phys. Conf. Ser.$$q37-40
000100704 909C0 $$xU10192$$0252025$$pCIME
000100704 909CO $$pSB$$particle$$ooai:infoscience.tind.io:100704
000100704 937__ $$aCIME-ARTICLE-2001-002
000100704 970__ $$a724/CIME
000100704 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000100704 980__ $$aARTICLE