000100673 001__ 100673
000100673 005__ 20180317092831.0
000100673 02470 $$2DAR$$a1255
000100673 02470 $$a000166835300005$$2ISI
000100673 037__ $$aCONF
000100673 245__ $$aPEELS Imaging and Linescan Study of Concentration Anisotropies in AlxGa1-xAs and InyGa1-yAs Heterostructures Grown on Non-Planar Substrates
000100673 269__ $$a1999
000100673 260__ $$c1999
000100673 336__ $$aConference Papers
000100673 490__ $$aInstitute of Physics Conference Series$$v164
000100673 700__ $$0241420$$g102335$$aLeifer, K
000100673 700__ $$0240082$$g106305$$aRudra, A.
000100673 700__ $$aBiasiol, G.
000100673 700__ $$aMichler, H.
000100673 700__ $$aBlank, E.
000100673 700__ $$aBuffat, P.A.$$g104664$$0240619
000100673 700__ $$aKapon, E.
000100673 773__ $$tMicroscopy of Semiconducting Materials$$q27-30
000100673 909CO $$pSB$$ooai:infoscience.tind.io:100673$$pconf
000100673 909C0 $$0252025$$pCIME$$xU10192
000100673 937__ $$aCIME-CONF-1999-002
000100673 970__ $$a471/CIME
000100673 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000100673 980__ $$aCONF