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research article
Evaluation of InP/InGaAsP distributed Bragg reflectors grown by chemical-beam epitaxy
We have evaluated the structure of high-reflectivity InP/InGaAsP distributed Bragg reflectors grown by chemical-beam epitaxy at a growth rate of 3 mu m/h. Transmission electron microscopy combined with electron energy loss spectroscopy indicate lateral fluctuations in the GaInAsP alloy composition, clearly visible in the 490-510 degrees C growth temperature range, but less perceptible between 460 and 480 degrees C. In the higher temperature range, the modulation in composition shows a higher frequency along the [1 (1) over bar 0] direction than along [1 1 0].
Type
research article
Web of Science ID
WOS:000074386800047
Authors
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Sagalowicz, L.
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Behrend, J.
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•
Dehaese, O.
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•
Publication date
1998
Published in
Volume
188
Issue
1-4
Start page
300
End page
306
Peer reviewed
REVIEWED
Available on Infoscience
February 15, 2007
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