Evaluation of InP/InGaAsP distributed Bragg reflectors grown by chemical-beam epitaxy

We have evaluated the structure of high-reflectivity InP/InGaAsP distributed Bragg reflectors grown by chemical-beam epitaxy at a growth rate of 3 mu m/h. Transmission electron microscopy combined with electron energy loss spectroscopy indicate lateral fluctuations in the GaInAsP alloy composition, clearly visible in the 490-510 degrees C growth temperature range, but less perceptible between 460 and 480 degrees C. In the higher temperature range, the modulation in composition shows a higher frequency along the [1 (1) over bar 0] direction than along [1 1 0].


Published in:
Journal of Crystal Growth., 188, 1-4, 300-306
Year:
1998
Keywords:
Laboratories:




 Record created 2007-02-15, last modified 2018-03-18


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