Transmission electron microscopy and cathodoluminescence of tensile-strained Ga/sub x/In/sub 1-x/P/InP heterostructures. I. Spatial variations of the tensile stress relaxation

We have investigated the optical and structural properties of tensile-strained GaxIn1-xP/InP heterojunctions by cathodoluminescence (CL) in the scanning electron microscope and by transmission electron microscopy (TEM). The lattice mismatch of the samples is ranging from 0.4% (x=5.5%) to 0.84% (x=11.8%). We show, in agreement with previous studies, that the relaxation of tensile-strained epilayers occurs by the emission of partial and perfect dislocations. The numerous twins and stacking faults which are found in the epilayers act as efficient recombination centers for electron-hole pairs and appear as dark line defects (DLDs) in CL images. ''Ladderlike'' configurations of these defects are found both by TEM and CL in samples with a lattice mismatch larger than 0.5%. We also demonstrate that DLDs are contaminated by impurities. Areas with networks of perfect dislocations are found between the DLDs, The analysis of the dislocation types allows us to suggest that the growth of low-mismatched samples is two dimensional, and that it is three dimensional in highly mismatched samples. Finally, the spatial variations of the strain relaxation throughout the samples are studied by 77-K CL spectroscopic measurements and it is shown that these variations can be correlated with the various types of structural defects. (C) 1996 American Institute of Physics.


Published in:
Journal of Applied Physics, 80, 2, 827-836
Year:
1996
ISSN:
0021-8979
Keywords:
Note:
Ecole polytech,grp rech & phys & technol couches minces,montreal,pq h3c 3a7,canada. ecole polytech fed lausanne,dept phys,imo,ch-1015 lausanne,switzerland. univ lyon 1,cnrs,ura 172,dept phys mat,f-68622 villeurbanne,france. Cleton, F, UNIV SCI & TECHNOL LILLE,LAB STRUCT & PROPRIETES ETAT SOLIDE,URA 234,CNRS,BATIMENT C6,F-59655 VILLENEUVE DASCQ,FRANCE.
ISI Document Delivery No.: UX156
Times Cited: 5
Cited Reference Count: 33
Cited References:
ANTOLINI A, 1995, I PHYS C, V146, P365
BENSAADA A, 1992, J APPL PHYS, V71, P1737
BENSAADA A, 1993, J CRYST GROWTH, V130, P433
BENSAADA A, 1994, J APPL PHYS, V75, P3024
BENSAADA A, 1994, P 6 INT C IND PHOSPH, P118
BOOKER GR, 1981, I PHYS C SER, V60, P203
CHEW NG, 1987, I PHYS C SER, V87, P231
CLETON F, UNPUB
CLETON F, 1993, INT PHYS C SER, V134, P655
DONOLATO C, 1980, J APPL PHYS, V51, P1624
FRIGERI C, 1991, MAT SCI ENG B-SOLID, V9, P115
GRUN AE, 1957, Z NATURFORSCH A, V12, P89
HERBEAUX C, 1989, APPL PHYS LETT, V54, P1004
HWANG DM, 1991, I PHYS C SCI, V120, P365
HWANG DM, 1991, PHYS REV LETT, V66, P739
HWANG DM, 1992, MATER RES SOC S P, V263, P421
KANG JM, 1994, J CRYST GROWTH, V143, P115
MAREE PMJ, 1987, J APPL PHYS, V62, P4413
MARZIN JY, 1985, PHYS REV B, V31, P8298
MERLE P, 1977, PHYS REV B, V15, P2032
PARK HH, 1992, J APPL PHYS, V72, P4063
PAVESI L, 1991, PHYS REV B, V44, P9052
PIKUS GE, 1959, FIZ TVERD TELA, V1, P136
RADZIMSKI ZJ, 1988, J APPL PHYS, V64, P2328
UEDA O, 1993, MAT SCI ENG B-SOLID, V20, P9
ULHAQBOUILLET C, 1994, PHILOS MAG A, V69, P995
WAGNER G, 1989, PHYS STATUS SOLIDI A, V112, P519
WAGNER G, 1989, Z KRISTALLOGR, V189, P269
WAGNER G, 1993, PHYS STATUS SOLIDI A, V138, P389
WAGNER G, 1994, PHYS STATUS SOLIDI A, V146, P371
WANG JN, 1993, SEMICOND SCI TECH, V8, P502
WEGSCHEIDER W, 1993, J VAC SCI TECHNOL B, V11, P1056
ZHU JG, 1990, PHILOS MAG A, V62, P319
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