Effect of growth interruptions on ultra thin InAs/InP quantum grown by chemical beam epitaxy
Carlin, JF; Rudra, A; Houdré, R; Ruterana, P; Ilegems, M
1992

Abstract

We have studied the effect of growth interruptions on 2 monolayer thick InAs/InP strained quantum wells (QWS) grown by chemical beam epitaxy. The main feature is the formation of up to 8 monolayer thick InAs islands during As, annealing of the QW. Their formation is characterized by a two- to three-dimensional transition of the reflection high energy electron diffraction (RHEED) pattern and by multiple-line photoluminescence spectra. This interpretation of the data is confirmed by transmission electron microscopy (TEM).

Details

Title Effect of growth interruptions on ultra thin InAs/InP quantum grown by chemical beam epitaxy
Author(s) Carlin, JF ; Rudra, A ; Houdré, R ; Ruterana, P ; Ilegems, M
Published in Journal of Crystal Growth
Volume 120
Issue 1-4
Pages 155-156
Date 1992
ISSN 0022-0248
Keywords
DOI https://doi.org/10.1016/0022-0248(92)90381-R
Other identifier(s) View record in Web of Science
Laboratories CIME
LASPE
SCI-SB-RH
LOEQ
Record Appears in Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > LASPE - Laboratory of Advanced Semiconductors for Photonics and Electronics
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LOEQ - Laboratory of Quantum Optoelectronics
Scientific production and competences > SB - School of Basic Sciences > IPHYS - Institute of Physics > SCI-SB-RH - Groupe SCI SB RH
Scientific production and competences > SB - School of Basic Sciences > CIME - Interdisciplinary Center for Electron Microscopy
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date 2007-02-15

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