Effect of growth interruptions on ultra thin InAs/InP quantum grown by chemical beam epitaxy

We have studied the effect of growth interruptions on 2 monolayer thick InAs/InP strained quantum wells (QWS) grown by chemical beam epitaxy. The main feature is the formation of up to 8 monolayer thick InAs islands during As, annealing of the QW. Their formation is characterized by a two- to three-dimensional transition of the reflection high energy electron diffraction (RHEED) pattern and by multiple-line photoluminescence spectra. This interpretation of the data is confirmed by transmission electron microscopy (TEM).


Published in:
Journal of Crystal Growth, 120, 1-4, 155-156
Year:
1992
ISSN:
0022-0248
Keywords:
Laboratories:




 Record created 2007-02-15, last modified 2018-01-27


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)