Structural Characterization of Short-Period SimGEn Superlattices by Transmission Electron Microscopy and X-Ray Diffraction

High resolution and analytical transmission electron microscopy (TEM) and X-ray diffraction (XRD) were used to characterize short-period strained-layer Sim-Gen superlattices ( m monolayers Si, n monolayers Ge, total number of periods N≤ 145, total thickness ≃ 200 nm). The superlattices were grown by low-temperature molecular beam epitaxy (T = 300–400°C) on different SiGe alloy buffer layers on Si (100)substrates. The combination of these two methods shows that detailed informations can be obtained about superlattice periodicity, interface roughness, strain, and average composition.


Published in:
MRS Proceedings, 220, 167-173
Year:
1991
ISSN:
1946-4274
Laboratories:




 Record created 2007-02-15, last modified 2018-12-03


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