conference paper
Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs
2006
IEEE International Electron Device Meeting, IEDM 2006
Type
conference paper
Web of Science ID
WOS:000247357700224
Author(s)
Date Issued
2006
Published in
IEEE International Electron Device Meeting, IEDM 2006
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
Available on Infoscience
May 16, 2007
Use this identifier to reference this record