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research article

Elastic strain engineering for ultralow mechanical dissipation

Ghadimi, A. H.
•
Fedorov, S. A.
•
Engelsen, N. J.
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2018
Science

Extreme stresses can be produced in nanoscale structures, a feature which has been used to realize enhanced materials properties, such as the high mobility of silicon in modern transistors. Here we show how nanoscale stress can be used to realize exceptionally low mechanical dissipation, when combined with “soft-clamping” — a form of phononic engineering. Specifically, using a non-uniform phononic crystal pattern, we colocalize the strain and flexural motion of a free-standing Si3N4 nanobeam. Ringdown measurements at room temperature reveal string-like modes with quality (Q) factors as high as 800 million and Q × frequency exceeding 1015 Hz. These results illustrate a promising route for engineering ultra-coherent nanomechanical devices.

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Type
research article
DOI
10.1126/science.aar6939
Author(s)
Ghadimi, A. H.
Fedorov, S. A.
Engelsen, N. J.
Bereyhi, M. J.
Schilling, R.
Wilson, D. J.
Kippenberg, T. J.
Date Issued

2018

Publisher

American Association for the Advancement of Science

Published in
Science
Volume

360

Issue

6390

Start page

764

End page

768

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LPQM  
Available on Infoscience
June 4, 2018
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/146697
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