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  4. Tunable Electromechanical Resonator Based On Carbon Nanotube Array Suspended Gate Field Effect Transistor (Cnt-Sgfet)
 
conference paper

Tunable Electromechanical Resonator Based On Carbon Nanotube Array Suspended Gate Field Effect Transistor (Cnt-Sgfet)

Arun, A.
•
Goffman, M. F.
•
Grogg, D.
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2010
MEMS 2010: 23rd IEEE International Conference On Micro Electro Mechanical Systems, Technical Digest
23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2010)

In this paper we report the first experimental demonstration of Micro-Electro-Mechanical resonator based on a Carbon Nanotube-Array-Suspended-Gate-Field-Effect-Transistor (CNT-SGFET). A dense array of single-walled CNT aligned by ac-dielectrophoresis technique forms the suspended gate electrode of a conventional silicon based FET. Resonance frequency of 120 MHz is reported. An equivalent electrical model has been developed for the resonator.

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Type
conference paper
DOI
10.1109/MEMSYS.2010.5442552
Web of Science ID

WOS:000278416400026

Author(s)
Arun, A.
Goffman, M. F.
Grogg, D.
Filoramo, A.
Campidelli, S.
Derycke, V.
Idda, T.
Salet, P.
Ionescu, A. M.  
Date Issued

2010

Publisher

IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, NJ 08855-1331 USA

Published in
MEMS 2010: 23rd IEEE International Conference On Micro Electro Mechanical Systems, Technical Digest
Series title/Series vol.

Proceedings: IEEE Micro Electro Mechanical Systems

Start page

112

End page

115

Editorial or Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Event nameEvent placeEvent date
23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2010)

Hong Kong, PEOPLES R CHINA

Jan 24-28, 2010

Available on Infoscience
January 9, 2012
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/76474
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