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  4. Corrections to “Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization”
 
research article

Corrections to “Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization”

Verhulst, Anne S.
•
Saeidi, Ali  
•
Stolichnov, Igor  
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July 1, 2020
Ieee Transactions On Electron Devices

This correspondence highlights that the Gibbs free energy description of a ferroelectric capacitor in series with a paraelectric capacitor, depends on the initial charge on the plates of the ferroelectric capacitor. An incomplete Gibbs free energy description, as in the original manuscript, leads to an incorrect simulation result. Therefore, a fully comprehensive analytical description and a corrected conclusion concerning the particular point of an increase in apparent coercive voltage in the steep-slope ferroelectric tunnel-FET, are presented.

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Type
research article
DOI
10.1109/TED.2020.2995786
Web of Science ID

WOS:000542842800057

Author(s)
Verhulst, Anne S.
•
Saeidi, Ali  
•
Stolichnov, Igor  
•
Alian, Alireza
•
Iwai, Hiroshi
•
Collaert, Nadine
•
Ionescu, Adrian M.  
Date Issued

2020-07-01

Published in
Ieee Transactions On Electron Devices
Volume

67

Issue

7

Start page

3017

End page

3017

Subjects

Engineering, Electrical & Electronic

•

Physics, Applied

•

Engineering

•

Physics

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
RelationURL/DOI

IsSupplementTo

https://infoscience.epfl.ch/record/274075
Available on Infoscience
August 12, 2020
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/170799
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