Repository logo

Infoscience

  • English
  • French
Log In
Logo EPFL, École polytechnique fédérale de Lausanne

Infoscience

  • English
  • French
Log In
  1. Home
  2. Academic and Research Output
  3. Conferences, Workshops, Symposiums, and Seminars
  4. On Gm-boosting and cyclostationary noise mechanisms in low-voltage CMOS differential Colpitts VCOs
 
conference paper

On Gm-boosting and cyclostationary noise mechanisms in low-voltage CMOS differential Colpitts VCOs

Koukab, Adil  
•
Talebi Amiri, Omid  
2012
I
IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

This paper presents a theoretical study of CMOS differential Colpitts VCOs. The objective is to provide a deep understanding of the different mechanisms that impact the performances of these VCOs, namely the Gm-boosting and cyclostationary noise. The developed methodology and expressions can be used to analyze, optimize and build new VCO topologies. A novel topology with an optimized gate to source (GS) feedback is proposed. It exhibits a figure of merit (FOM) better than -190 dBc/Hz/mW for all the frequency offsets.

  • Files
  • Details
  • Metrics
Loading...
Thumbnail Image
Name

SiRF 2012.pdf

Type

Publisher's Version

Version

Published version

Access type

openaccess

Size

581.08 KB

Format

Adobe PDF

Checksum (MD5)

d5d32fa7bdd90c29e2912318c8362143

Logo EPFL, École polytechnique fédérale de Lausanne
  • Contact
  • infoscience@epfl.ch

  • Follow us on Facebook
  • Follow us on Instagram
  • Follow us on LinkedIn
  • Follow us on X
  • Follow us on Youtube
AccessibilityLegal noticePrivacy policyCookie settingsEnd User AgreementGet helpFeedback

Infoscience is a service managed and provided by the Library and IT Services of EPFL. © EPFL, tous droits réservés