Memory devices have returned to the spotlight due to increasing interest in using in-memory computing architectures to make data-driven algorithms more energy-efficient. One of the main advantages of this architecture is the efficient performance of vector-matrix multiplications while avoiding the “von Neumann bottleneck.” Despite these promises, no single material platform meets all the requirements for the fabrication of this new processor technology. Recently, flash memories based on monolayer MoS 2 have been shown to achieve ultra-fast operation, overcoming one of the main drawbacks of this memory type. Together with its other characteristics, this makes them a promising candidate for the base elements of this technology. However, the question remains of how to achieve large-area ultra-fast operation of MoS 2 monolayer flash memories. In this work, we will compare large-area flash memories based on MoS 2 used in past realizations of in-memory systems and analyze the improvements needed to achieve ultra-fast performance for in-memory applications.