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  4. Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal
 
research article

Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal

Truong, T. A.
•
Campos, L. M.
•
Matioli, Elison  
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2009
Applied Physics Letters

A noninvasive fabrication process involving soft nanoimprint lithography is used to pattern a photonic crystal (PhC) in titania film for enhanced light extraction from a GaN light emitting diode (LED). This technique avoids damaging the LED structure by the etching process, while photoluminescence measurements show extracted modes emitted from the quantum wells which agree well with modeling. A light extraction improvement of 1.8 times is measured using this noninvasive PhC.

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Type
research article
DOI
10.1063/1.3067837
Author(s)
Truong, T. A.
Campos, L. M.
Matioli, Elison  
Meinel, I.
Hawker, C. J.
Weisbuch, C.
Petroff, P. M.
Date Issued

2009

Publisher

American Institute of Physics

Published in
Applied Physics Letters
Volume

94

Issue

2

Article Number

023101

Subjects

etching

•

gallium compounds

•

III-V semiconductors

•

light emitting diodes

•

nanolithography

•

nanopatterning

•

photoluminescence

•

photonic crystals

•

semiconductor quantum wells

•

semiconductor thin films

•

soft lithography

•

titanium compounds

•

wide band gap semiconductors

Editorial or Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
POWERLAB  
Available on Infoscience
March 17, 2016
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/125022
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