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  4. Carrier-carrier interaction and fast intersubband scattering in wide GaAs quantum wells
 
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Carrier-carrier interaction and fast intersubband scattering in wide GaAs quantum wells

Rota, L.
•
Hartig, M.
•
Haacke, S.  
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1999
Ultrafast Phenomena in Semiconductors

Wide quantum wells, where the energy spacing between the first two energy levels is lower than the energy of the polar optical phonon, could represent the ideal condition to obtain a population inversion and the production of infrared lasers. On the other hand in these quantum wells the efficiency of carrier-carrier scattering is increasing with the width of the well and can produce a relatively quick relaxation of carriers in the first subband. In this work we present a detailed and systematic joint theoretical and experimental investigation considering different well width and carrier density and we conclude that in most cases the carrier-carrier scattering is sufficiently strong to forbid a significant population inversion.

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Type
book part or chapter
DOI
10.4028/www.scientific.net/MSF.297-298.103
Web of Science ID

WOS:000080081600020

Author(s)
Rota, L.
Hartig, M.
Haacke, S.  
Selbmann, P. E.
Deveaud, B.  
Date Issued

1999

Publisher

Transtec Publications Ltd

Published in
Ultrafast Phenomena in Semiconductors
Start page

103

End page

106

Series title/Series vol.

Materials Science Forum; 297-298

Subjects

intersubband scattering

•

population inversion

•

laser

•

wide quantum wells

•

RELAXATION

Note

ECCE, IT-42019 Scandiano, RE, Italy. Swiss Fed Inst Technol, IMO, Dept Phys, CH-1015 Lausanne, Switzerland. Rota, L, ECCE, Via Brolo Sopra 3, IT-42019 Scandiano, RE, Italy.

ISI Document Delivery No.: BM90N

Cited References:

CRAIG K, 1994, SEMICOND SCI TECH S, V9, P627

FAIST J, 1994, APPL PHYS LETT, V64, P872

FERREIRA R, 1989, PHYS REV B, V40, P1074

GOODNICK SM, 1988, PHYS REV B, V37, P2578

HARTIG M, 1996, PHYS REV B, V54, P14269

HELM M, 1994, APPL PHYS LETT, V64, P872

HEYMAN JN, 1995, PHYS REV LETT, V74, P2682

LEVENSON JA, 1989, SOLID STATE ELECTRON, V32, P1869

MURDIN BN, 1994, SEMICOND SCI TECH, V9, P1554

OBERLI DY, 1987, PHYS REV LETT, V59, P696

ROTA L, 1993, PHYS REV B, V47, P4226

TATHAM MC, 1989, PHYS REV LETT, V63, P1637

Article

BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LOEQ  
Available on Infoscience
August 31, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/11361
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