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  4. Electronic Instability in a Zero-Gap Semiconductor: The Charge-DensityWave in (TaSe4)(2)I
 
research article

Electronic Instability in a Zero-Gap Semiconductor: The Charge-DensityWave in (TaSe4)(2)I

Tournier-Colletta, C.  
•
Moreschini, L.  
•
Autes, G.  
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2013
Physical Review Letters

We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)(2)I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the nondistorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the charge-density wave formation below T-CDW = 263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to-semiconductor transition observed in transport at T-CDW.

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Type
research article
DOI
10.1103/PhysRevLett.110.236401
Web of Science ID

WOS:000320115000017

Author(s)
Tournier-Colletta, C.  
•
Moreschini, L.  
•
Autes, G.  
•
Moser, S.  
•
Crepaldi, A.  
•
Berger, H.  
•
Walter, A. L.
•
Kim, K. S.
•
Bostwick, A.
•
Monceau, P.
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Date Issued

2013

Publisher

American Physical Society

Published in
Physical Review Letters
Volume

110

Issue

23

Article Number

236401

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LSE  
C3MP  
Available on Infoscience
October 1, 2013
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/95229
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