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research article
Dilute nitride InGaAsN/GaAs V-groove quantum wires emitting at 1.3 μm wavelength at room temperature
Site-controlled InGaAsN quantum wires (QWRs) emitting at 1.3 lm at room temperature were grown on V-grooved GaAs substrates by modulated-flux metallorganic vapor phase epitaxy. The nonplanar substrate template is shown to enhance the nitrogen uptake, evidenced by a redshift in photoluminescence wavelength twice larger for the QWRs than for the adjacent quantum well regions. The mechanism of this increase in nitrogen incorporation efficiency, achieved without degradation in optical properties, is explained by the extended gradient of In content at the step-rich QWR interfaces.
Type
research article
Web of Science ID
WOS:000294739100007
Authors
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Fekete, Dan
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Publication date
2011
Publisher
Published in
Volume
99
Issue
10
Article Number
101107
Peer reviewed
NON-REVIEWED
Available on Infoscience
September 15, 2011
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