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research article

Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric

Boucart, K.  
•
Ionescu, A.  
2007
Solid-State Electronics
  • Details
  • Metrics
Type
research article
DOI
10.1016/j.sse.2007.09.014
Web of Science ID

WOS:000251831200013

Author(s)
Boucart, K.  
Ionescu, A.  
Date Issued

2007

Publisher

Elsevier

Published in
Solid-State Electronics
Volume

51

Issue

11-12

Start page

1500

End page

1507

Editorial or Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Available on Infoscience
November 8, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/57260
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