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conference paper
GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer
2009
2009 Conference On Lasers And Electro-Optics And Quantum Electronics And Laser Science Conference (Cleo/Qels 2009)
Nitride blue lasers including an AlInN cladding lattice matched to GaN were fabricated. Lasing at 415nm is observed at 300K with a threshold current density of 7.5kA/cm(2) and a peak power of 140mW at 1.2A. (C) 2009 Optical Society of America
Type
conference paper
Web of Science ID
WOS:000274751301139
Author(s)
Date Issued
2009
Publisher
Published in
2009 Conference On Lasers And Electro-Optics And Quantum Electronics And Laser Science Conference (Cleo/Qels 2009)
Start page
1631
End page
1632
Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
| Event name | Event place | Event date |
Baltimore, MD | Jun 02-04, 2009 | |
Available on Infoscience
October 11, 2010
Use this identifier to reference this record