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  4. Terephthalic acid adsorption on Si(111)-(root 3x root 3)-Bi surfaces: Effect of Bi coverage
 
research article

Terephthalic acid adsorption on Si(111)-(root 3x root 3)-Bi surfaces: Effect of Bi coverage

Suzuki, T.
•
Lutz, T.
•
Costantini, G.
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2011
Surface Science

The influence of the density of metallic atoms on the formation of supramolecular structures onto Si surface alloys is investigated by scanning tunneling microscopy. Terephthalic acid (TPA) adsorption experiments are performed on the Si(111) alpha- and beta-(root 3 x root 3)-Bi surfaces. Although both surfaces have the same unit cell with Bi atoms incorporated into the Si substrate, they show a completely different behavior in respect to the formation of the supramolecular arrays. TPA molecules do not build any regular structure and adsorb randomly on the a surface but self-assemble into ordered and extended layers on the beta surface. This demonstrates that the absence of dangling bonds in metal-Si surface alloys is not a sufficient condition for supramolecular self-assembly but that the surface density of metallic atoms is a further essential parameter. (C) 2011 Elsevier B.V. All rights reserved.

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Type
research article
DOI
10.1016/j.susc.2011.07.017
Web of Science ID

WOS:000296175100011

Author(s)
Suzuki, T.
Lutz, T.
Costantini, G.
Kern, K.  
Date Issued

2011

Published in
Surface Science
Volume

605

Start page

1994

End page

1998

Subjects

Scanning tunneling microscopy

•

Supramolecular self-assembly

•

Si-metal surface alloys

•

Si(111) Surface

•

2 Phases

•

Coordination

•

Cu(100)

•

Films

•

Reconstruction

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Substrate

•

Networks

•

Hydrogen

•

Cu(110)

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LSEN  
Available on Infoscience
December 16, 2011
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/73378
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