research article
GaN based LEDs grown by molecular beam epitaxy
1997
GaN based LEDs are grown on sapphire by MBE using NH3. The n- and p-type doping levels are 4x10(18) and 3x10(17) cm(-3), respectively. LEDs turn on at 3V, and the forward voltage is 3.7V at 20mA. The electroluminescence peaks at 390 nm.
Type
research article
Author(s)
Date Issued
1997
Published in
Volume
33
Issue
25
Start page
2156
End page
2157
Editorial or Peer reviewed
REVIEWED
Written at
OTHER
EPFL units
Available on Infoscience
October 5, 2010
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