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  4. Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer
 
research article

Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

Castiglia, A.  
•
Feltin, E.
•
Dorsaz, J.  
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2008
Electronics Letters

A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guided devices at room temperature under pulsed current injection conditions. Direct comparison with structures including only a standard Al0.07Ga0.93N bottom cladding shows an improved optical confinement. This is exemplified by a decreased threshold current density.

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Type
research article
DOI
10.1049/el:20080495
Web of Science ID

WOS:000255414900012

Author(s)
Castiglia, A.  
Feltin, E.
Dorsaz, J.  
Cosendey, G.  
Carlin, J. F.  
Butte, R.  
Grandjean, N.  
Date Issued

2008

Published in
Electronics Letters
Volume

44

Issue

8

Start page

521

End page

522

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

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October 5, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/55049
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