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  4. Grafting of Oxidized Silicon Nitride Insulator for the Preparation of ISFET Monolayer Membrane
 
conference paper

Grafting of Oxidized Silicon Nitride Insulator for the Preparation of ISFET Monolayer Membrane

Perrot, H.
•
Jaffrezic-Renault, N.
•
Eymin, M. J.
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1990
3rd International Meeting on Chemical Sensors
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Type
conference paper
Author(s)
Perrot, H.
Jaffrezic-Renault, N.
Eymin, M. J.
Gagnaire, A.
Duvault, J. L.
Hollinger, G.
de Rooij, N. F.  
Racine, G.-A.
Jeanneret, S.
Maaref, A.
Date Issued

1990

Published in
3rd International Meeting on Chemical Sensors
Editorial or Peer reviewed

NON-REVIEWED

Written at

OTHER

EPFL units
SAMLAB  
Available on Infoscience
May 12, 2009
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/39681
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