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  4. Chemisorption pathways and Si 2p core-level shifts for the interaction of spherosiloxane clusters with Si(100): Implications for photoemission in Si/SiO2 systems
 
research article

Chemisorption pathways and Si 2p core-level shifts for the interaction of spherosiloxane clusters with Si(100): Implications for photoemission in Si/SiO2 systems

Raghavachari, K.
•
Pasquarello, Alfredo  
•
Eng, J.
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2000
Applied Physics Letters

Using a first-principles density functional approach, we investigate the chemisorption mechanism for the interaction of spherosiloxane (H8Si8O12) clusters on Si(100). Our transition state studies reveal that the chemisorption pathway with the lowest activation barrier corresponds to attachment via Si-O bond cleavage across a surface dimer. Using the relaxed surface structure from this "cracked cluster" model, we calculate Si 2p core-level shifts, including core-hole relaxation effects, and show that the calculated values are in excellent agreement with the positions and intensities of all the experimentally observed core-level shifts. (C) 2000 American Institute of Physics. [S0003-6951(00)00526-X].

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Type
research article
DOI
10.1063/1.126805
Web of Science ID

WOS:000087719800009

Author(s)
Raghavachari, K.
Pasquarello, Alfredo  
Eng, J.
Hybertsen, M. S.
Date Issued

2000

Published in
Applied Physics Letters
Volume

76

Issue

26

Start page

3873

End page

3875

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
CSEA  
Available on Infoscience
October 8, 2009
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/43413
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