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  4. Amplification in epitaxially grown Er:(Gd, LU)(2)O-3 waveguides for active integrated optical devices
 
research article

Amplification in epitaxially grown Er:(Gd, LU)(2)O-3 waveguides for active integrated optical devices

Kahn, Andreas
•
Kuehn, Henning
•
Heinrich, Sebastian
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2008
Journal Of The Optical Society Of America B-Optical Physics

Monocrystalline lattice matched Er(0.6 at. %): (Gd, LU)(2)O-3 films with nearly atomically flat surfaces and thicknesses up to 3 Am have been grown on Y2O3 substrates using pulsed laser deposition. The emission cross sections were comparable with the ones of Er:Y2O3 bulk crystals, showing only a marginal spectral broadening. Rib channel waveguiding could be demonstrated after structuring the films with reactive ion etching. Gain measurements have been performed and the results compared with a theoretical gain spectrum. A gain of 5.9 dB/cm could be measured at 1535.5 nm through in-band pumping at 1480 nm. The scattering losses in such a 7 mm long rib waveguide have been determined to be below 4.4 dB at 632.8 nm. An extrapolation to the gain wavelength with the lambda(-4)-Rayleigh law of scattering resulted in losses of 0.2 dB/cm at 1.5 mu m. (C) 2008 Optical Society of America

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Type
research article
DOI
10.1364/JOSAB.25.001850
Web of Science ID

WOS:000261399800013

Author(s)
Kahn, Andreas
Kuehn, Henning
Heinrich, Sebastian
Petermann, Klaus
Bradley, Jonathan D. B.
Worhoff, Kerstin
Pollnau, Markus  
Kuzminykh, Yury
Huber, Guenter
Date Issued

2008

Published in
Journal Of The Optical Society Of America B-Optical Physics
Volume

25

Start page

1850

End page

1853

Subjects

Laser

•

Y2O3

•

Efficiency

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LOA  
Available on Infoscience
November 30, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/60790
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