Thermal-Conversion of N-Type Gaas-Si to P-Type in Excess Arsenic Vapor
Annealing in excess arsenic vapor at 650-degrees-C introduces thermal conversion of n-type Si-doped GaAs samples (n = 1.3 X 10(18) cm-3) into p type. The observations are made by current-voltage and electron-beam induced current measurements. The donor concentration on the n side near the junction decreases after annealing. We present a comparison between the photoluminescence spectra of samples annealed under different conditions and an analysis of depth profile of the photoluminescence spectra. Our results underline the important role of gallium vacancies and gallium vacancy-silicon donor complex in the thermal conversion.
WOS:A1991GJ67500075
1991
70
7
3887
3891
Univ trento,dept phys,i-38050 trent,italy. Ky, nh, swiss fed inst technol,inst microelectr & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: GJ675
Cited Reference Count: 29
Cited References:
ASOM MT, 1988, APPL PHYS LETT, V52, P1472
BLANC J, 1964, J PHYS CHEM SOLIDS, V25, P225
BONCEK RK, 1988, J APPL PHYS, V64, P6315
BRIDGES F, 1990, J PHYS C SOLID STATE, V2, P2975
BURGIEL JC, 1969, J APPL PHYS, V40, P2583
CHIANG SY, 1975, J APPL PHYS, V46, P2986
CHIANG SY, 1975, J LUMIN, V10, P313
CHICHIBU S, 1989, JPN J APPL PHYS PT 1, V28, P1750
EDMOND JT, 1960, J APPL PHYS, V31, P1428
GREINER ME, 1985, J APPL PHYS, V57, P5181
HALL RN, 1964, J APPL PHYS, V35, P379
HWANG CJ, 1969, J APPL PHYS, V40, P4584
HWANG CJ, 1969, J APPL PHYS, V40, P4591
HWANG CJ, 1969, PHYS REV, V180, P827
ISHIKAWA T, 1986, ELECTRON LETT, V22, P189
KY NH, 1991, J APPL PHYS, V69, P7585
LAGOWSKI J, 1986, APPL PHYS LETT, V49, P892
LOOK DC, 1986, APPL PHYS LETT, V49, P1083
MORROW RA, 1991, J APPL PHYS, V69, P3396
MUNOZ E, 1970, APPL PHYS LETT, V16, P262
OTSUKA H, 1969, JPN J APPL PHYS, V8, P632
PLANO MA, 1988, APPL PHYS LETT, V52, P1077
SUEZAWA M, 1991, J APPL PHYS, V69, P1618
SWAMINATHAN V, 1988, J APPL PHYS, V63, P2164
SZE SM, 1966, APPL PHYS LETT, V8, P111
TOYAMA M, 1969, JPN J APPL PHYS, V8, P1000
WILLIAMS EW, 1972, SEMICONDUCTORS SEMIM, V8
WYSOCKI JJ, 1960, J APPL PHYS, V31, P1686
XU HQ, 1990, PHYS REV B, V41, P5979
REVIEWED
EPFL