research article
Modeling and Design Space of Junctionless Symmetric DG MOSFETs With Long Channel
We investigate the technological con-strains and design limitations of ultrathin body junctionless dou- ble gate MOSFET (JL DG MOSFET). Relationships between the silicon thickness and the doping concentration compatible with design requirements in terms of OFF-state-current and voltages are obtained and validated with TCAD simulations. This set of analytical expressions can be used as a guideline for technology optimization of JL DG MOSFETS.
Type
research article
Web of Science ID
WOS:000320870000005
Date Issued
2013
Published in
Volume
60
Issue
7
Start page
2120
End page
2127
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
Available on Infoscience
August 7, 2013
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