Low‐Temperature EBIC Study of Zn‐Diffused GaAs p‐n Junctions
To study the effect of damage induced during the Zn diffusion on the properties of the material, p-n junctions, obtained by zinc diffusion, are investigated by electron beam induced current (EBIC) at different temperatures. At helium temperature, the EBIC decay on the p-side is flattened and non exponential. This effect is attributed to the defects induced by the Zn-diffusion that act as non-radiative centers. The room temperature EBIC signal has a symmetric exponential decay on both sides of the junction. The EBIC measurements for different temperatures and electron beam voltages indicate that the surface recombinations affect the carrier transport at room temperature hindering the non-exponential EBIC decay observed at helium temperature. The recombination dynamic is affected stronger by the as grown (001) surface than by the cleaved (110) surface.
WOS:A1992HR43000025
1992
129
2
555
567
Univ trento,dept phys,i-38050 trent,italy. Araujo, d, swiss fed inst technol,inst micro & optoelectr,ch-1015 lausanne,switzerland.
ISI Document Delivery No.: HR430
Cited Reference Count: 31
Cited References:
ARAUJO D, 1990, HELV PHYS ACTA, V63, P519
BERZ F, 1976, SOLID ST ELECTRON, V19, P437
BOULOU M, 1977, J APPL PHYS, V48, P4713
BRESSE JF, 1982, SCANNING ELECTRON MI, V4, P1487
BURK DE, 1983, J APPL PHYS, V54, P169
BURNHAM RD, 1986, I PHYS C SER, V83, P9
DAVIDSON SM, 1982, SOLID STATE ELECTRON, V25, P261
DEPPE DG, 1988, J APPL PHYS, V64, R93
DIMITRIADIS CA, 1981, J PHYS D, V14, P2269
DONOLATO C, 1982, SOLID ST ELECTRON, V25, P1077
HARRISON I, 1989, SEMICOND SCI TECH, V4, P841
ILEGEMS M, 1985, PROPERTIES 3 5 LAYER
IOANNOU DE, 1982, IEEE T ELECTRON DEV, V29, P445
JAKUBOWICZ A, 1987, SCANNING MICROSCOPY, V1, P515
KOCH F, 1987, PHYS STATUS SOLIDI A, V104, P931
KOCH F, 1988, PHYS STATUS SOLIDI A, V109, P261
KY NH, 1990, HELV PHYS ACTA, V63, P831
KY NH, 1991, J APPL PHYS, V69, P7585
MAKLOV AF, 1960, SOLID STATE, V2, P1934
MARTEN HW, 1983, SCANNING ELECTRON MI, V4, P1197
NEUBERT G, 1980, PHYS STATUS SOLIDI A, V59, P35
PAVESI L, 1991, OPT QUANTUM ELECT, V23, S789
QUINTANA V, 1987, J APPL PHYS, V63, P2454
SOUKUP RJ, 1985, J APPL PHYS, V57, P5386
SZE SM, 1981, PHYSICS SEMICONDUCTO
VANROOSBROECK W, 1955, J APPL PHYS, V26, P380
VONOORS O, 1983, J APPL PHYS, V54, P3938
VONROOS O, 1983, J APPL PHYS, V54, P1390
WARWICK CA, 1987, SCANNING MICROSCOPY, V1, P51
WOLFE CM, 1970, J APPL PHYS, V41, P3088
YACOBI BG, 1986, J APPL PHYS, V59, R1
REVIEWED
EPFL