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research article

Carbon nanotube transistors - chemical functionalization and device characterization

Balasubramanian, Kannan
•
Lee, Eduardo J. H.
•
Weitz, Ralf Thomas
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2008
Physica Status Solidi A-Applications And Materials Science

This review presents an overview of the recent progress made in the field of carbon nanotube (CNT)-based field-effect transistors (FETs). Starting from the simplest device architectures, various methods reported for fabricating CNT-FETs are presented. The main focus is laid on the use of chemical functionalization strategies both at a tube and at a device level to improve the performance of the devices. In addition to solid dielectric gate insulators, the use of liquids or solid polymer electrolytes as effective electrochemical gating media is outlined. Following this, device parameters of the various CNT-FETs are compared and discussed. Finally, the utility of scanning photocurrent microscopy as an efficient characterization tool to estimate electronic band-profiles of CNT-FETs is highlighted. The review concludes with future perspectives in this rapidly emerging field.

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Type
research article
DOI
10.1002/pssa.200723410
Web of Science ID

WOS:000254913000021

Author(s)
Balasubramanian, Kannan
Lee, Eduardo J. H.
Weitz, Ralf Thomas
Burghard, Marko  
Kern, Klaus  
Date Issued

2008

Published in
Physica Status Solidi A-Applications And Materials Science
Volume

205

Start page

633

End page

646

Subjects

Field-Effect Transistors

•

High-Kappa Dielectrics

•

Polymer Electrolytes

•

Electrical-Transport

•

Single

•

Performance

•

Electronics

•

Deposition

•

Biosensors

•

Molecules

Editorial or Peer reviewed

REVIEWED

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November 30, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/61456
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