research article
Microscopic Schottky-Barrier Control - Semiconductor-on-Metal Case
1992
We have modified the Schottky-barrer height of Si overlayers on Ag(111) substrates by means of Cs intralayers of different thicknesses. We also found a correlation between these changes and those of the work function, which makes it possible to measure the true value of the S parameter.
Type
research article
Web of Science ID
WOS:A1992JE62600072
Author(s)
Date Issued
1992
Published in
Volume
46
Issue
3
Start page
1835
End page
1837
Note
Ecole polytech fed lausanne,ph ecublens,inst phys appl,ch-1015 lausanne,switzerland. Hwu, y, univ wisconsin,dept phys,madison,wi 53706.
ISI Document Delivery No.: JE626
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
Available on Infoscience
October 3, 2006
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