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  4. Inhomogeneous Strain Relaxation and Defect Distribution of Znte Layers Deposited on (100)Gaas by Metalorganic Vapor-Phase Epitaxy
 
research article

Inhomogeneous Strain Relaxation and Defect Distribution of Znte Layers Deposited on (100)Gaas by Metalorganic Vapor-Phase Epitaxy

Lovergine, N.
•
Liaci, L.
•
Ganiere, J. D.  
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1995
Journal of Applied Physics
  • Details
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Type
research article
DOI
10.1063/1.360656
Web of Science ID

WOS:A1995RE58200032

Author(s)
Lovergine, N.
Liaci, L.
Ganiere, J. D.  
Leo, G.
Drigo, A. V.
Romanato, F.
Mancini, A. M.
Vasanelli, L.
Date Issued

1995

Published in
Journal of Applied Physics
Volume

78

Issue

1

Start page

229

End page

235

Subjects

MISFIT DISLOCATIONS

•

GAAS

•

GROWTH

Note

Infm,unita gnsm,i-73100 lecce,italy. ecole polytech fed lausanne,inst micro & optoelectr,ch-1015 lausanne,switzerland. cnr,ist mat elettr,i-73100 lecce,italy. univ padua,dipartimento fis g galilei,i-35100 padua,italy. infm,unita gnsm,i-35100 padua,italy. Lovergine, n, univ lecce,dipartimento sci mat,via per arnesano,i-73100 lecce,italy.

ISI Document Delivery No.: RE582

Cited Reference Count: 12

Cited References:

BAUER S, 1993, ULTRAMICROSCOPY, V51, P221

DIXON RH, 1990, J APPL PHYS, V68, P1975

DUNSTAN DJ, 1991, APPL PHYS LETT, V59, P3390

DUROSE K, 1993, I PHYS C SER, V134, P581

ETGENS VH, 1993, PHYS REV B, V47, P10607

FELDMAN LC, 1982, MATERIALS ANAL ION C

FELDMAN RD, 1988, J APPL PHYS, V64, P1191

LOVERGINE N, 1993, APPL PHYS LETT, V63, P3452

LOVERGINE N, 1993, J CRYST GROWTH, V128, P633

MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118

PATRAT G, 1990, SOLID STATE COMMUN, V74, P433

SCHWARTZMAN AF, 1991, J ELECTRON MATER, V20, P805

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LOEQ  
Available on Infoscience
August 31, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/11150
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