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  4. Growth study of AlN on amorphous films with defined roughness
 
conference paper

Growth study of AlN on amorphous films with defined roughness

Artieda, Alvaro
•
Muralt, Paul  
2008
2008 Ieee Ultrasonics Symposium
IEEE Ultrasonics Symposium

(001)-textured AIN thin films as needed for longitudinal bulk acoustic wave (BAW) devices exhibit large mechanical stress variations and large orientation variation as a function of growth substrate properties. We prepared thin silicon and silicon dioxide layers by sputter deposition to increase the roughness of thermal oxide films. The amorphous silicon films exhibited an rms roughness of 0.1 to 1.1 nm and the amorphous SiO2 an rms roughness ranging from 0.2 to 3.8 nm. In the following we studied stress, orientation, and rocking curve width of AIN films grown on these substrates. Mechanical stress varied from -700 to + 350 MPa and X-ray rocking curve width of AIN increased from 1.3 to 4.5 degrees with increasing roughness. The effect of substrate RF bias during AIN deposition was studied as well. The piezoelectric d(33)f coefficient varied together with the rocking curve width and the mechanical stress. Optimal conditions so far identified yielded a d(33)f of 4.2pm/V in case of a 1.2 mu m piezoelectric AlN film grown on a amorphous sputtered SiO2 layer.

  • Details
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Type
conference paper
DOI
10.1109/ULTSYM.2008.0219
Web of Science ID

WOS:000268845800219

Author(s)
Artieda, Alvaro
Muralt, Paul  
Date Issued

2008

Publisher

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa

Published in
2008 Ieee Ultrasonics Symposium
Start page

907

End page

911

Subjects

Aluminum Nitride

•

Tfbar

•

Substrate roughness

•

Sputtering

•

Nitride Thin-Films

•

Stress

•

Dependence

Editorial or Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
LC  
Event nameEvent placeEvent date
IEEE Ultrasonics Symposium

Beijing, PEOPLES R CHINA

Nov 02-05, 2008

Available on Infoscience
November 30, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/60607
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