conference paper
DC characterization and low-frequency noise in delta-doped, pulse-doped and uniformly-doped GaAs/AlGaAs MODFETs
1993
Proceedings of the 23 rd European Solid State Device Research Conference
We present a comparative study, at 300 K and at low longitudinal field, of the DC characteristics and the low-frequency noise in the drain current of GaAs/AlGaAs MODFETs which, ideally, differ only by the doping mode of the AlGaAs layer. The higher 1/f-like noise in the δ-doped structure is consistent with our previous suggestion that charge fluctuations under the gate contribute significantly to the 1/f-like noise. This work further indicates that the charge centers are related to the Si dopants under the gate.
Type
conference paper
Author(s)
Date Issued
1993
Published in
Proceedings of the 23 rd European Solid State Device Research Conference
Start page
447
End page
450
Editorial or Peer reviewed
NON-REVIEWED
Written at
EPFL
EPFL units
| Event name | Event place | Event date |
Grenoble, France | Sept. 13-16, 1993 | |
Available on Infoscience
August 31, 2015
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