Local volume inversion and corner effects in triangular gate-all-around MOSFETs

Moselund, K. E.; Bouvet, D.; Tschuor, L.; Pott, V.; Dainesi, P.; Ionescu, A. M.

doi:10.1109/ESSDER.2006.307712.

conference paper

Local volume inversion and corner effects in triangular gate-all-around MOSFETs

Moselund, K. E.

•

Bouvet, D.

•

Tschuor, L.

more

2006

2006 European Solid-State Device Research Conference

ESSDERC 2006

Type

conference paper

DOI

10.1109/ESSDER.2006.307712.

Web of Science ID

WOS:000245038000085

Authors

Moselund, K. E.

•

Bouvet, D.

•

Tschuor, L.

•

Pott, V.

•

Dainesi, P.

•

Ionescu, A. M.

Publication date

2006

Published in

2006 European Solid-State Device Research Conference

Start page

359

End page

362

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units

NANOLAB

Event name

ESSDERC 2006

Available on Infoscience

May 16, 2007

Use this identifier to reference this record

https://infoscience.epfl.ch/handle/20.500.14299/6988