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research article

Photoluminescence decay times in strong-coupling semiconductor microcavities

Piermarocchi, C.
•
Savona, V.  
•
Quattropani, A.
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1996
Physical Review B

A theoretical investigation of the dynamics in a photoluminescence experiment in strong-coupling semiconductor microcavities is presented. Radiative recombination rates of microcavity polaritons in the strong-coupling regime and their scattering rates with acoustic phonons are used to study the polariton dynamics in a photoluminescence experiment, as a function of the temperature and the cavity detuning. It is found that the leaky modes of the distributed Bragg reflectors enclosing the cavity constitute the main sink of radiation, and that these modes dominate the whole recombination process. As a result, the rise and decay times are almost independent of the cavity detuning. Moreover, these times are close to those of the bare exciton at any temperature, thus showing little cavity influence on the overall photoluminescence dynamics.

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Type
research article
DOI
10.1103/PhysRevB.53.R7642
Web of Science ID

WOS:A1996UC94700018

Author(s)
Piermarocchi, C.
Savona, V.  
Quattropani, A.
Schwendimann, P.
Tassone, F.
Date Issued

1996

Published in
Physical Review B
Volume

53

Start page

R7642

End page

R7645

Subjects

Gaas Quantum-Wells

•

Exciton Lifetimes

•

Dependence

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LTPN  
Available on Infoscience
September 22, 2009
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/42866
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