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conference paper
Study of Fin-Tunnel FETs with doped pocket as Capacitor-less 1T DRAM
2014
Proceedings of the SOI-3D-Subthreshold Microelectronics Technology Unified Conference
Type
conference paper
Authors
Publication date
2014
Publisher
Published in
Proceedings of the SOI-3D-Subthreshold Microelectronics Technology Unified Conference
Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
| Event name | Event place | Event date |
San Francisco, California, USA | December 6-9, 2014 | |
Available on Infoscience
October 18, 2014
Use this identifier to reference this record