Repository logo

Infoscience

  • English
  • French
Log In
Logo EPFL, École polytechnique fédérale de Lausanne

Infoscience

  • English
  • French
Log In
  1. Home
  2. Academic and Research Output
  3. Journal articles
  4. Punch-through impact ionization MOSFET (PIMOS): From device principle to applications
 
Loading...
Thumbnail Image
research article

Punch-through impact ionization MOSFET (PIMOS): From device principle to applications

Moselund, K. E.  
•
Bouvet, D.  
•
Pott, V.  
Show more
2008
Solid-State Electronics

In the present work a punch-through impact ionization MOSFET (PIMOS) is presented, which exploits impact ionization in low-doped body-tied [Omega]- and tri-gate structures to obtain abrupt switching (3-10 mV/decade) combined with a hysteresis in the ID(VDS) and ID(VGS) characteristics. The PIMOS device shows an extraordinary temperature stability up to 125 °C. The influence of various parameters on device performance as abrupt switch or memory cell is investigated. Reduction of the electrical channel length, i.e. of gate length and/or substrate doping, reduces the breakdown voltage and hence the DRAM operating voltage, but also increase the Ioff. Two architectures for a capacitor-less DRAM cell are demonstrated and evaluated. In addition, a PIMOS n-type hysteretic inverter is demonstrated, which may serve as a 1T SRAM cell.

  • Details
  • Metrics
Type
research article
DOI
10.1016/j.sse.2008.04.021
Web of Science ID

WOS:000259688300013

Author(s)
Moselund, K. E.  
•
Bouvet, D.  
•
Pott, V.  
•
Meinen, C.
•
Kayal, M.  
•
Ionescu, A. M.  
Date Issued

2008

Published in
Solid-State Electronics
Volume

52

Issue

9

Start page

1336

End page

1344

Subjects

Impact ionization

•

Small-slope switch

•

Hysteresis

Note

internal-pdf://Punch-through impact ionization MOSFET (PIMOS) From device principle to applica-2478143232/Punch-through impact ionization MOSFET (PIMOS) From device principle to applications.PDF

Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
GR-KA  
Available on Infoscience
January 8, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/45148
Logo EPFL, École polytechnique fédérale de Lausanne
  • Contact
  • infoscience@epfl.ch

  • Follow us on Facebook
  • Follow us on Instagram
  • Follow us on LinkedIn
  • Follow us on X
  • Follow us on Youtube
AccessibilityLegal noticePrivacy policyCookie settingsEnd User AgreementGet helpFeedback

Infoscience is a service managed and provided by the Library and IT Services of EPFL. © EPFL, tous droits réservés