High quality InP/InGaAsP Distributed Bragg Reflectors (DBRs) are a key element in Vertical Cavity Surface Emitting Laser (VCSELs) for long wavelength (1.55 mu m) applications [1-3]. Because of the small index difference between InP and InGaAsP, more than 30 periods are needed to obtain reflectivities above 99 %, which makes it a challenge for the crystal growth technique. In this paper we present the structural and optical characteristics of such DBRs grown by Chemical Beam Epitaxy (CBE) at high growth rates that comply with the requirements for the integration in long wavelength VCSELs.