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  4. An MOS Transistor Model for RF IC Design Valid in All Regions of Operation
 
research article

An MOS Transistor Model for RF IC Design Valid in All Regions of Operation

Enz, C.  
2002
IEEE Transactions on Microwave Theory and Techniques
  • Details
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Type
research article
DOI
10.1109/22.981286
Author(s)
Enz, C.  
Date Issued

2002

Published in
IEEE Transactions on Microwave Theory and Techniques
Volume

50

Issue

1

Start page

342

End page

359

Subjects

Device Modeling

•

MOST Modeling

•

RF

Note

(invited)

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
LSI2  
Available on Infoscience
June 24, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/51118
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